Our group investigates physics of semiconductor materials and device processing for their application to electronic devices. Specifically, we study electronic properties at interfaces between dielectric thin film formed on wide band gap Silicon Carbide for application to power transistors. We have a variety of thin film deposition (metal evaporation, sputtering, semiconductor thermal oxidation and chemical vapor deposition) semiconductor fabrication (lithography, etching etc.) and analysis tools (current-voltage, capacitance-voltage, Hall, scanning probe microscopy) available in our laboratories. We also use the 2 MeV ion accelerator available in our laboratory https://www.auburn.edu/cosam/departments/physics/department/laboratories/accelerator/index.htm for a variety of projects related to radiation damage studies, implantation doping of materials and perform Rutherford Backscattering spectrometry analysis of thin film materials.

1. S. Das , H. Gu, L.Wang, A.C. Ahyi, L. C. Feldman, E. Garfunkel, M. A. Kuroda and S. Dhar, “Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing. Journal of Applied Physics, 133, 215701 (2023).

https://doi.org/10.1063/5.0139185

2. A. Sardar, T. I.-Smith, J. Lawson, T. Asel, R.B. Comes, N. Merrett and S. Dhar, “ High conductivity beta-Ga2O3 formed by hot Si implantation”, Applied Physics Letters, 121, 262101 (2022).

https://doi.org/10.1063/5.0127457

3. S. Das, A. C. Ahyi, M. A. Kuroda, and S. Dhar, “Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis”, MDPI open access, Materials 15(19), 6736 (2022).

https://doi.org/10.3390/ma15196736.

4. S. Das, T. Isaacs-Smith, A. Ahyi, M. A. Kuroda, and S. Dhar, “High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors,” Journal of Applied Physics, 130, 225701 (2021).

https://doi.org/10.1063/5.0073523

5. I. U. Jayawardhena, R. P. Ramamurthy, D. Morisette, A. C. Ahyi, R. Thorpe, M. A. Kuroda, L. C. Feldman and S. Dhar, “Effect of surface treatments on ALD Al₂O₃/4H-SiC metal–oxide–semiconductor field-effect transistors”, Journal of Applied Physics, 129, 075702 (2021).

https://doi.org/10.1063/5.0040586

6. A. Jayawardena, R. P. Ramamurthy, A. C. Ahyi, D. Morisette and S. Dhar, “Interface trapping in β-Ga2O3 MOS capacitors with deposited dielectrics”, Applied Physics Letters, 112, 192108 (2018).

 https://doi.org/10.1063/1.5019270

7. Y. Zheng, T.-I. Smith, A. C. Ahyi and S. Dhar, “4H-SiC MOSFETs with boroslicate glass gate dielectric and anitimony counter-doping” IEEE Electron Device Letters, 38, 1433 (2017).

https://doi.org/10.1109/LED.2017.2743002

8. A. M. Armstrong, M. H. Crawford, A. Jayawardena*, A.C. Ahyi, and S. Dhar, “Role of Self-trapped Holes in the Photoconductive Gain of b-Gallium Oxide Schottky Diodes”, Journal of Applied Physics, 119, 103102 (2016).

http://dx.doi.org/10.1063/1.4943261

9. J. Jiang^#, M. A. Kuroda, A. C. Ahyi, T. Isaacs-smith, V. Mirkhani, M. Park, and S. Dhar “Chitosan Solid Electrolyte as Electric-Double-Layer in Multilayer MoS₂ Transistor for Low-Voltage Operation”, Physica Status Solidi A, 212, 2101 (2015).

https://doi.org/10.1002/pssa.201532284

10. G. Liu, B. R. Tuttle, and S. Dhar“Silicon carbide: A unique platform for metal-oxide-semiconductor physics” Applied Physics Reviews 2 021307 (2015).    

http://dx.doi.org/10.1063/1.4922748