Sarit Dhar
Department of Physics
Andrew T. Hunt Endowed Professor

Research Areas: Experimental Condensed Matter Physics

Office: Leach Science Center 2109

Address: 380 Duncan Drive
Auburn, AL 36849

Phone: (334) 844-4618

Email: sarit_dhar@auburn.edu


Education
Ph.D., Vanderbilt University
2005
M.S., Indian Institute of Technology
2000
B.S., Indian Institute of Technology
1998


Professional Employment
Associate Professor, Auburn University
2015-current
Assistant Professor, Auburn University
2012 - 2015
Research Scientist, Cree Inc.
2008 - 2012
Research Associate, Vanderbilt University
2005 - 2008
Graduate Research Assistant, Vanderbilt University
2001 - 2005
Graduate Teaching Assistant, Vanderbilt University
2000 - 2001


Honors and Awards
Andrew T. Hunt Endowed Professor
2020 - current
Thomas and Jean Walter Associate Professor
2017-2020
American Physical Society’s 5 sigma physicist award for outstanding science advocacy
2019


Professional Activities
Member of: Materials Research Society, Electrochemical Society, Institute of Electrical and Electronics Engineers
NSF Panel Reviewer
Reviewer for Center for Functional Nanomaterials (CFN) at Brookhaven National Laboratory
Reviewer for the following journals: IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Solid State Electronics, Journal of Applied Physics, Applied Physics Letters, Journal of Physics D: Applied Physics, Semiconductor Science and Technology, Nanotechnology and ECS Journal of Solid State Science and Technology


Research and Teaching Interests

Semiconductor materials and devices, Dielectric-semiconductor interfaces,  Ion beam modification and analysis of materials


Selected Publications

1. Zheng, T.-I. Smith, A. C. Ahyi and S. Dhar, “4H-SiC MOSFETs with boroslicate glass gate dielectric and anitimony counter-doping” IEEE Electron Device Letters, 38, 1433 (2017). Doi: https://doi.org/10.1109/LED.2017.2743002

2. A. Jayawardena, A.C. Ahyi and S. Dhar, “Analysis of temperature dependent electrical characteristics of Ni / (-201) β-Ga2O3 Schottky diodes”, Semiconductor Science and Technology, 31, 115002 (2016).

https://doi.org/10.1088/0268-1242/31/11/115002

3. Jiao, A. C. Ahyi, C. Xu, D. Morisette, L. C. Feldman and S. Dhar, “Phospho-silicate glass gated 4H-SiC MOS devices: phosphorus concentration dependence”, Journal of Applied Physics ,119, 155705 (2016).

http://dx.doi.org/10.1063/1.4947117

4. G. Liu, B. R. Tuttle, and S. Dhar “Silicon carbide: A unique platform for metal-oxide-semiconductor physics” Applied Physics Reviews 2 021307 (2015).    

http://dx.doi.org/10.1063/1.4922748

5.  Jiang, M. A. Kuroda, A. C. Ahyi, T. Isaacs-smith, V. Mirkhani, M. Park, and S. Dhar “Chitosan Solid Electrolyte as Electric-Double-Layer in Multilayer MoS2 Transistor for Low-Voltage Operation” Physica Status Solidi A 212 2101 (2015) .

doi: 10.1002/pssa.201532284

                         







Last updated: 02/10/2021