Physics Colloquium-Band-Engineered Complex Oxide Interfaces: New Insights and Opportunities

Dr. Bharat Jalan

Dept of Chemical Engineering and Materials Science

 University of Minnesota

Combining DFT modeling and experiments using x-ray photoelectron spectroscopy, scanning transmission electron microscopy, electron energy loss spectroscopy, energy dispersive x-ray spectroscopy and electronic transport measurements, I will discuss and address the long-standing issues of the origin of carriers, dimensionality and transport mechanisms at a polar/non polar oxide interface. I will present a novel approach for creating high-density 2DEGs at perovskite heterojunction using internal charge transfer. 2D carrier density much higher density than expected based on resolution of the polar discontinuity at perovskite oxide heterojunctions can be achieved via internal charge transfer using band-engineered interfaces. Finally, I will discuss how electron density at the interface can be tailored using composition providing an potential transformational route to revisit the electronic phase diagrams of transition metal oxides in the “clean” doping limit.